Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDJ129P
Edited by the Electronicstalk Editorial
Team on 30 July 2003
Low-voltage MOSFET liberates 60% of
board space
The FDJ129P is a new P-channel MOSFET that offers a combination of performance and space-saving benefits in power management for portable applications.
The FDJ129P is a new P-channel mosfet that offers a combination of performance and space-saving benefits in power management for applications such as cellphones, PDAs, portable music players, GPS receivers, low-voltage/low-power DC/DC convertors and digital cameras The FDJ129P features Fairchild's high-performance PowerTrench technology in a compact SC75 FLMP (flip leaded moulded package)
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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The result of this advanced technology combination is a 60% board space reduction, compared with similar mosfet solutions offered in SSOT-6 or TSOP-6 packages.
The FDJ129P's power dissipation is 1.8W and has a maximum steady-state current of 4.2A - 12 times greater than competing SC75-packaged technology.
The FDJ129P offers similar performance to a typical TSOP-6 based product, such as the FDC640P, but consumes 60% less board area and has a 34% lower profile than the TSOP-6 package.
Chris Winkler, Market Development Manager for Portable Product Applications said: "Customers can now reduce their circuit board size and upgrade their circuit to higher current operation by using the SC75 FLMP".
In addition, the FDJ129P reduces system power drain by providing low-loss switching, with a maximum steady-state current of 4.2A and a maximum pulsed current of 16A.
Fairchild is the first to offer a P-channel mosfet in FLMP packaging.
This patented package eliminates conventional wire-bonds to provide extremely low electrical resistance.
The FLMP package also provides a low thermal resistance path between the PCB and the mosfet die (drain connection).
The combination of lower electrical resistance and lower thermal resistance greatly enhances performance in power management applications.
The reduced package height of the FDJ129P (maximum 0.8mm) allows this product to be used under RF shields and internal subassemblies and displays, fulfilling the industry's growing demand for products with thinner, low-profile packages.
In addition to packaging advantages, this new device provides extremely low on-resistance (70mohm at -4.5V and 120mohm at -2.5V) and low gate charge (maximum 6nC at +/-12V).
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