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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FCP11N60 and FCPF11N60
Edited by the Electronicstalk Editorial Team on 26 February 2004

MOSFETs cut power supply losses

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Two new high-voltage MOSFETs use Fairchild's new SuperFET technology to significantly reduce system power loss, increasing efficiency and reliability in switch-mode PSU and PFC applications.

Two new high-voltage mosfets use Fairchild's new SuperFET technology to significantly reduce system power loss, increasing efficiency and reliability in SMPS (switch mode power supply) and PFC (power factor correction) applications Fairchild's proprietary SuperFET technology implements a compensation region using a multi-epitaxial layer to improve on-resistance

The new FCP11N60 and the FCPF11N60 SuperFET mosfets feature low figure of merit, with the FCP11N60 device offering the best available FOM compared with products of the same on-resistance level.

Both the FCP11N60 and FCPF11N60 provide best-in-class di/dt (1430A/us, maximum) resulting from the devices' wide body-diode profile to ensure increased ruggedness, ultralow on-resistance (0.32ohm, typical), and low effective output capacitance (35pF, typical).

Providing the same on-resistance as standard planar mosfets in TO-3P packages, Fairchild's new TO-220 and TO-220F packaged mosfets provide improved power density.

The FCP11N60 and the FCPF11N60 offer optimised gate charge levels (40nC, typical) for reduced gate driver power rating and switching power losses.

"Fairchild's line of SuperFET high-voltage mosfets offers designers comparatively low output capacitance in the same stored energy, which is especially beneficial in SMPS applications", said Taehoon Kim, Vice-President of Fairchild's High Power Product Group.

The new FCP11N60 and the FCPF11N60 are available in TO-220 and TO-220F packaging, respectively.

This lead-free (Pb-free) product meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B and is compliant with the European Union requirements, which will take effect in 2005.

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