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Product category: Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FDB2614 and FDB2710
Edited by the Electronicstalk Editorial Team on 16 February 2007

MOSFETs cut figure of merit for display
switching

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N-channel MOSFETs provide industry-leading system efficiency and space optimisation in plasma display panel applications.

Fairchild Semiconductor's new FDB2614 (200V) and FDB2710 (250V) N-channel MOSFETs are designed specifically to provide industry-leading system efficiency and space optimisation in plasma display panel (PDP) applications By utilising Fairchild's proprietary PowerTrench process technology, these MOSFETs achieve the lowest available on-resistance (typically 22.9mohm for the FDB2614 and 36.3mohm for the FDB2710), compared with similar devices on the market

This low on-resistance, combined with a very low gate charge, results in a best-in-class figure of merit (FOM), which in turn translates into lower conduction loss and excellent switching performance in PDP systems.

The devices' extremely low on-resistance and small die size at 200V or 250V breakdown voltages enables these devices to be packaged in space-saving D2PAK packaging.

An added benefit of PowerTrench MOSFETs is their ability to enhance system reliability by withstanding both high-speed voltage (dv/dt) and current (di/dt) switching transients.

"Fairchild's FDB2614 and FDB2710 MOSFETs' leading FOM and compact DPAK packaging make them ideal for the path switch in PDP applications", said Taehoon Kim, Fairchild's Vice President of Functional Power Group.

"By tailoring these devices to offer high current-handling capability and space-saving packaging for slim PDP board designs, Fairchild once again proves its dedication to answering the most pressing application issues confronting its customers".

The FDB2614 and FDB2710 are lead (Pb)-free devices that meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020C and are compliant with European Union regulations now in effect.

Samples are available now.

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