Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: Stealth II and Hyperfast II
Edited by the Electronicstalk Editorial
Team on 13 April 2007
Speedy diodes smooth out LCD TV supplies
Stealth II and Hyperfast II diodes help optimise LCD TV switch-mode power supply applications.
Fairchild Semiconductor offers Stealth II and Hyperfast II diode technology as part of a total power device solution specifically designed to optimise LCD TV switch-mode power supply (SMPS) applications The new FFP08S60S and FFPF08S60S Stealth II diodes exhibit excellent soft recovery (tb/ta better than 1.3) and very fast reverse-recovery time (less than 25ns at 600V breakdown voltage)
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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Also new is the FFPF08H60S Hyperfast II diode.
Featuring fast reverse-recovery time (less than 35ns at 600V breakdown voltage) and low forward-voltage drop (less than 2.1V), this diode helps reduce conduction losses to increase energy efficiency in DCM (discontinuous-current-mode) PFC designs.
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The new Stealth II and Hyperfast II technology was developed to combine with, and complement, an array of Fairchild's existing UniFET and SuperFET MOSFET technologies.
This vast product offering presents a comprehensive solution for increasing system efficiency and reliability while lowering EMI in LCD TV power designs.
An LCD TV's SMPS operates in two types of PFC current modes: CCM and DCM.
For optimising CCM designs, Fairchild's new FFP/PF08S60S Stealth II fast-recovery diodes can be combined with Fairchild's previously introduced UniFET MOSFETs.
For example, the 19A 500V FDA18N50 UniFET uses proprietary planar stripe DMOS technology for low on-resistance (0.265ohm at 10V) and high unclamped inductive switching (UIS) capability.
Combining a new Stealth II diode with this UniFET device reduces switching loss by 10% compared with previous-generation devices, which results in excellent system efficiency.
Similarly, Fairchild's new FFPF08H60S Hyperfast II diode can be combined with the same UniFET device to improve efficiency and avalanche protection during DCM PFC operation.
Today's LCD TV SMPS must reduce power consumption while maintaining system performance and reliability in switching-mode operation.
Fairchild's existing SuperFET fast recovery MOSFET (FRFET) products are optimised to meet this design challenge.
Uniting SuperFET technology with a lifetime killing process, SuperFET FRFETs offer improved body-diode characteristics, turnoff dv/dt immunity and low EMI.
The latest-generation FCPF11N60F device, for example, offers reverse recovery time of 120ns, charge of 0.8uC and up to 50V/ns dv/dt capability.
These advanced MOSFETs increase efficiency and reliability in even the most cutting-edge LLC half-bridge convertors.
Says Taehoon Kim, Vice President of Fairchild's Functional Power Solutions: "By tailoring our new Stealth II and Hyperfast II diodes to achieve these system benefits and then combining them with existing technologies, Fairchild demonstrates its ability to draw on its proven product and design expertise to help engineers keep pace with increasing design challenges".
The Stealth II and Hyperfast II products are available in lead (Pb)-free packages that meet or exceed the requirements of the joint IPC/JEDEC standard J-STD-020C and are compliant with European Union regulations now in effect.
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