Product category:
Discrete Power Devices
News Release from: Fairchild Semiconductor | Subject: FGA20N120FTD and FGA15N120FTD
Edited by the Electronicstalk Editorial
Team on 19 March 2008
Efficiency gain for IGBTs
Field stop structure and avalanche-rugged trench gate technology combine to offer optimal tradeoffs between conduction losses and switching losses.
A new series of 1200V field stop trench IGBTs from Fairchild Semiconductor offer increased efficiency for designers of induction heating systems Using both the field stop structure and avalanche-rugged trench gate technology, the FGA20N120FTD and FGA15N120FTD offer optimal tradeoffs between conduction losses and switching losses, which maximise efficiency
This article was originally published on Electronicstalk on 28 Feb 2001 at 8.00am (UK)
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Compared with conventional NPT trench IGBTs, the FGA20N120FTD offers 25% lower conduction losses and 8% lower switching losses, significantly reducing the system's operating temperature.
By lowering the cooling needs, system reliability is increased and overall system cost is reduced.
Reliability is further ensured by a built-in fast-recovery diode (FRD) that is optimised for zero voltage switching (ZVS) technology.
Fairchild's FGA20N120FTD and FGA15N120FTD minimise performance variability and device failures in avalanche-mode operation due to tight parameter distributions and increased avalanche energy.
This is achieved with Fairchild's innovative field stop structure and proprietary advanced trench gate cell design.
The FGA20N120FTD and FGA15N120FTD have lead-free (Pb-free) terminals and have been characterised for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020.
All of Fairchild's products are designed to meet the requirements of the RoHS Directive.
Samples are available now, and 1000-off pricing is US $4.00 for the FGA20N120FTDTU and US $2.80 for the FGA15N120FTDTU.
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