Product category:
Discrete Power Devices
News Release from: First Components | Subject: KMB4D8DN55Q
Edited by the Electronicstalk Editorial
Team on 04 January 2007
Dual power MOSFET is speedy switcher
KEC, the largest manufacturer of discrete electronic components in Korea, has announced a 4.8A dual power MOSFET in an SO-8 surface mount package.
KEC, the largest manufacturer of discrete electronic components in Korea has announced a 4.8A dual power MOSFET in an SO-8 surface mount package The maximum on-resistance is specified at 50mohm, with a typical value of 38mohm measured at 4.5A
The KMB4D8DN55Q is a dual N-channel enhancement MOSFET with 4.8A and 55V drain-source capability in trench MOSFET technology.
Fast switching applications are possible due to a relatively low gate-capacity of 805pF.
The typical threshold voltage is 1.8V, with a maximum of 2.5V.
The device is rated for a maximum junction temperature of 150C.
This small surface mount package MOSFET is very well suited as electronic switch and for sensor, measurement and automation applications.
The maximum power dissipation at 25C reaches 2W.
The 4.8A KMB4D8DN55Q types are supplied in SO-8 SMD packages.
KEC power MOSFETs are RoHS compliant.
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