Product category:
Discrete Power Devices
News Release from: First Components | Subject: KMB050N60P
Edited by the Electronicstalk Editorial
Team on 15 January 2007
MOSFET is made for high current switches
The KMB050N60P is an N-channel enhancement-mode MOSFET rated at 50A and 60V drain-source voltage in planar-stripe technology.
First Components has introduced a 50A power MOSFET in a TO-220 package from KEC Corporation of Korea The maximum on-resistance is 22mohm, and typically only 18mohm at 25A
The KMB050N60P is an N-channel enhancement-mode MOSFET rated at 50A and 60V drain-source voltage in planar-stripe technology.
This KEC power MOSFET withstands a single pulse avalanche energy of 493mJ.
Fast switching applications including inductive switching are possible due to a low gate-capacity of 1365pF.
The device is rated for a maximum junction temperature of 175C.
This highly rugged MOSFET is mainly used in high current switches and linear power supplies.
Other key applications are push-pull amplifiers for motor-driving circuits.
The maximum power dissipation at 25C reaches 120W.
The 50A KMB050N60P MOSFET is available in a TO-220AB package.
All KEC power MOSFETs are RoHS compliant.
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