Product category:
Memory Devices and Modules
News Release from: Fujitsu Microelectronics Europe | Subject: MB82DDS08314A
Edited by the Electronicstalk Editorial
Team on 29 November 2006
Mobile FCRAM speeds to double datarate
Fujitsu Microelectronics Europe has announced the availability of a new 256Mbit mobile fast cycle RAM (FCRAM).
Fujitsu Microelectronics Europe has announced the availability of a new 256Mbit mobile fast cycle RAM (FCRAM) The mobile FCRAM is a pseudo static RAM (PSRAM) with an SRAM interface on Fujitsu's unique FCRAM core technology
This article was originally published on Electronicstalk on 16 Feb 2001 at 8.00am (UK)
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The new mobile FCRAM, the MB82DDS08314A, adopts double datarate (DDR) burst mode operations and is fully compliant with the common specifications for mobile RAM (COSMORAM) Revision 4.
The device has the following features: DDR synchronous burst mode; multiplexed address/data interface; high-speed data transfer performance of up to 1Gbyte/s; and short initial access time by short latency mode.
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"For the future mobile phone market, there is no doubt that memories featuring large-density, high-speed operation and low power consumption, like this new mobile FCRAM, become necessary components", said Mark Ellins, Director of the Communications Business Unit at FME.
"Today, high-end mobile phones require feature-rich functions such as digital still and video cameras, and digital terrestrial broadcasting streaming".
"Fujitsu's FCRAM family will provide high-speed datarate to enhance the mobile phone feature on the existing PSRAM-based platform".
"Furthermore, the MB82DDS08314A minimises the device pin-counts by multiplexing address and databus, and smaller pin counts will eliminate the customer's complicated board design".
Fujitsu is the pioneer of pseudo SRAM for mobile phone markets and is a major contributor to the establishment and expansion of the market.
In the past, to meet the needs of high-speed memory, Fujitsu introduced the burst mode mobile FCRAM family, 32 and 64Mbit devices in May 2003 and a 128Mbit device in August 2003.
In addition to the new DDR burst mobile FCRAM, 256Mbit single datarate (SDR) mobile FCRAM, the MB82DBS08314A, compliant with the conventional COSMORAM Rev 3, is also offered.
This device is the solution for customers who need large RAM density with an existing SDR PSRAM interface.
Engineering samples will be available in January 2007, and volume production will be available in April 2007.
Both devices are available packaged, as well as in chip and wafer form.
FME continues to offer the best memory solutions to individual customers for their unique applications. Request a free brochure from Fujitsu Microelectronics Europe ...
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