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Product category: Memory Devices and Modules
News Release from: GD Technik | Subject: AT52BR1662T
Edited by the Electronicstalk Editorial Team on 22 January 2003

Flash and SRAM combine for fast access

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New from GD Technik is the latest Atmel combination memory, which combines 16Mbyte Flash with 2Mbyte SRAM.

New from GD Technik is the latest Atmel combination memory, which combines 16Mbyte Flash with 2Mbyte SRAM The AT52BR1662T features operating voltages of 2.7 to 3.3V, low-power consumption, and thanks to the Flash memory's single memory plane, rapid access times

It is ideal for portable applications such as laptops and PDAs.

The new device provides fast access times of 70 and 90ns with a power dissipation of just 70mW at 2.7V.

Maximum operational current consumption is 40mA, while standby current is less than 50mA.

The device's 16Mbyte Flash memory is organised as 1M x 16bit.

Sector architecture comprises 31 x 32K word sectors and 8 x 4Kword sectors.

The fast word program time is 20ms and fast sector erase time is 200ms.

This memory can be read or reprogrammed using a single 2.7V power supply, making it ideally suited for in-system programming.

The SRAM is organised as 128K x 16bit with a power saving sleep mode.

Access time is 70ns.

The SRAM has fully static operation and a tristate output.

A minimum supply of 1.2V is required for data retention.

Operating over the industrial temperature range, the AT52BR1662T is packaged in a 66-ball plastic chip-scale ball grid array (CBGA) measuring 8 x 10 x 1.2mm.

It is a member of Atmel's versatile family of high-performance stacked Flash and SRAM module products.

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