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Stand-Alone Instruments
News Release from: Hitachi High-Technologies (Electron Microscopy) | Subject: FB-2100
Edited by the Electronicstalk Editorial
Team on 15 October 2002
Ion beam system samples semiconductors
A new focused ion beam milling system is ideal for specimen preparation of semiconductors and other advanced materials for both scanning electron microscopy and transmission electron microscopy.
A new focused ion beam milling system, suitable for specimen preparation of semiconductors and other advanced materials for both scanning electron microscopy (SEM) and transmission electron microscopy (TEM) has been developed by Hitachi High-Technologies Corp The FB-2100 joins the FB-2000A in providing complex surface etching capabilities combined with high-resolution scanning ion imaging
This article was originally published on Electronicstalk on 28 Jan 2002 at 8.00am (UK)
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The FB-2100 features a new, low aberration ion optical system, which can deliver a maximum beam current of 30nA at an accelerating voltage of 40kV.
This enables a maximum beam current density of 25A/cm2 to be achieved at 40kV, for faster milling.
Specimen holders compatible with the FB-2100 and Hitachi SEMs and TEMs are available to allow specimens to be prepared in the FB-2100 then transferred easily to the appropriate microscope, without the need to reposition the sample.
This minimises specimen damage during repeated milling/microscopy cycles.
The FB-2100 also offers scanning ion microscopy capabilities, to allow the user to locate the areas to be milled.
Excellent resolution of 6nm or better can be achieved at an acceleration voltage of 40kV, which is much better than can be achieved with systems using optical microscopy techniques.
The FB-2100 can be used for a host of applications, including site specific microsampling using step and box millings, sequential area milling followed by 3D reconstruction techniques and preparation of samples to give improved spatial resolution for EDX analysis.
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