Product category:
Discrete Power Devices
News Release from: Hitachi Europe | Subject: HAT1072H
Edited by the Electronicstalk Editorial
Team on 31 October 2001
Lower on-resistance for MOSFET saves
space
Hitachi has a new P-channel power MOSFET that it says offers the industry's lowest on-resistance of 3.6mohm (typical), approximately 40% lower than Hitachi's previous model.
Hitachi has a new P-channel power mosfet that it says offers the industry's lowest on-resistance of 3.6mohm (typical), approximately 40% lower than Hitachi's previous model The HAT1072H achieves this on-resistance with a breakdown voltage of -30V using a small, thin, surface-mount LFPAK package (Hitachi package code name) that has the same mounting area as an SOP-8, enabling systems to be made smaller and more energy-saving
This article was originally published on Electronicstalk on 16 Feb 2001 at 8.00am (UK)
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The HAT1072H uses a 0.3-micron process to achieve a higher cell density and an optimised cell structure to achieve a low on-resistance.
In addition, the wireless-construction surface-mount LFPAK package (measuring 5.3 x 6.2 x 1.1mm (maximum)) enables the on-resistance to be reduced by approximately 40% compared with Hitachi's current HAT1048R device.
This is the industry's lowest on-resistance for an LFPAK P-channel power mosfet with -30V drain-source breakdown voltage and 4.5V drive capability, and for an SOP-8 package power mosfet with the same mounting area.
This makes it possible to prevent the increase in power loss associated with a greater load current.
Moreover, the HAT1072H can be used where two previous devices were used in parallel, enabling system size to be reduced.
Sample shipments will begin in November 2001 in Japan.
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