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Product category: Communications ICs (Wireless)
News Release from: Hitachi Europe
Edited by the Electronicstalk Editorial Team on 29 November 2001

RF Micro Devices and Hitachi in GaAs
accord

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RF Micro Devices and Hitachi have signed a cross-supplier agreement for GaAs HBT wafer and module design and manufacturing.

RF Micro Devices and Hitachi have signed a cross-supplier agreement for GaAs HBT wafer and module design and manufacturing The agreement is effective immediately

It is expected that under the agreement Hitachi will design and assemble modules for RFMD's module products, while RFMD will design and supply GaAs HBT semiconductor wafers for Hitachi's module products.

Both companies will maintain full and independent control of their respective product planning, product development, manufacturing, marketing and sales activities.

Under the agreement, both parties plan to use the other's world-class core competencies to improve the value and functionality of their respective products.

By focusing on core competencies, both parties expect to improve their respective capabilities and minimise overall costs.

Jerry Neal, executive vice president of sales, marketing and strategic development of RFMD, said, "We expect this collaboration will increase capacity utilisation in our fabs, reduce costs and improve our overall competitiveness.

We're eager to tap into Hitachi's module design and assembly capabilities while providing them immediate fab capacity".

Neal continued, "We've already received initial production orders from Hitachi for GaAs HBT JCDMA power amplifier die, which we designed for a module developed by Hitachi for the Japanese market.

We expect shipments to commence in this quarter, with volumes forecast to ramp into calendar year 2002".

"Working together, RFMD and Hitachi will maximise our abilities to remain at the forefront of the rapidly advancing technologies needed to meet future customer demands", said Kunio Kobayashi, Director, Micro Module Business Unit, Hitachi.

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