Product category:
Communications ICs (Wired)
News Release from: IDT | Subject: Network search engines
Edited by the Electronicstalk Editorial
Team on 13 December 2005
Search engine shrinks for improved
performance
IDT has released the industry's first network search engine manufactured on TSMC's 90nm process.
IDT has released the industry's first NSE (network search engine) manufactured on TSMC's 90nm process This next-generation device, which is now sampling, achieves new levels of performance, cost and power consumption to further accelerate packet processing in enterprise switches and core/edge routers
This article was originally published on Electronicstalk on 14 Mar 2003 at 8.00am (UK)
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Network search engines accelerate gigabit routers
Furukawa Electric has selected IDT's 256Kx36 and 128Kx36 NSEs to accelerate packet processing and enable intelligent application management in its next-generation Fitelnet G-Series gigabit routers.
NSEs feature dual NPF LA-1 interfaces
IDT has developed the industry's first monolithic network search engines in 512K x 36 (18Mbit) and 256K x 36 (9Mbit) configurations with dual Network Processor Forum LA-1 interfaces.
Using cutting-edge process technology and innovative design techniques, the IDT next-generation NSE doubles core search performance while cutting power consumption in half and reducing package size by 30%.
In addition, because the TSMC 90nm technology uses 300mm wafers for its manufacturing process, IDT achieves world-class economy of scale and efficient NSE production.
In addition to offering the industry's first NSE manufactured on 90nm process technology, IDT is also the first NSE vendor to announce shipments exceeding seven million units, and is recognised by RHK and IDC as the technology leader, and as the volume shipment leader of NSEs.
All of the company's NSE devices are coupled with comprehensive design support, including hardware and software design tools that speed time to market and lower overall development costs.
TSMC's Nexsys 90nm is the only foundry process at that node to feature standard copper interconnects, low-k dielectrics, and 12in wafer production.
The Nexsys 90nm process provides a 2x gate density improvement, 35% faster speed, 60% improvement in active power savings and a 20% interconnect RC improvement compared with the company's 0.13um process.
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