Product category:
Discrete Power Devices
News Release from: Intersil | Subject: DenseTrench power MOSFETs
Edited by the Electronicstalk Editorial
Team on 08 January 2001
Ultra-low-power MOSFETs prolong battery
life
Intersil has launched its advanced new DenseTrench power MOSFET family of discrete power devices designed for higher-efficiency low-voltage power switching applications.
Intersil has launched its advanced new DenseTrench power mosfet family of discrete power devices designed for higher-efficiency low-voltage power switching applications The new UltraFET Trench devices feature extremely low conduction and switching losses to significantly extend battery life in notebook PCs, cellular telephones, PDAs and other portable information appliances
This article was originally published on Electronicstalk on 8 Jan 2001 at 8.00am (UK)
Related stories
Programmable up-converter simplifies basestations
Intersil has added a new highly integrated quad up-convertor to its CommLinkT family of digital radio ICs for fixed basestation applications.
Intersil and Sony develop new wireless TV solution
Intersil has worked with Sony to develop Point Co-ordination Function (PCF) technology based on Intersil's latest Prism 2.5 wireless LAN chipset solution.
They also improve the overall efficiency of high frequency DC/DC convertors used to power the latest microprocessor systems in desktop PCs and servers.
The first UltraFET Trench devices from Intersil include a series of fast-switching 30V mosfets, part number ISL9N310A, available in DPak, D2Pak and TO220 packages.
The advanced DenseTrench process results in extremely low on-resistance per silicon area while maintaining fast switching and low gate charge.
For example, the 30V mosfetS feature on-resistances down to 0.007Ohm or less, with relatively high current capability up to 30A.
"Anyone who regularly operates a laptop computer or portable device recognises the need for increased battery life, and these new DenseTrench products are targeted at meeting this need by reducing power losses and increasing efficiency", says Krishna Kuchimanchi, product marketing manager at Intersil.
UltraFET Trench devices use trench technology that differs from the planar technology traditionally used in standard mosfet products and features more than twice the channel density of competitive trench designs.
According to Intersil, the higher the channel density, the lower the overall channel resistance of the device and the lower the power losses.
• Intersil: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page
Search the Pro-Talk network of sites
