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Product category: Microprocessors, Microcontrollers and DSPs
News Release from: Innos
Edited by the Electronicstalk Editorial Team on 02 August 2004

Ion implantation system expands R and D
capability

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Southampton-based Innos has invested a further GBP 1 million in its 10002m microelectronics clean room.

Southampton-based Innos has invested a further GBP 1 million in its 10002m microelectronics clean room The purchase of the Varian E500HP high performance ion implantation system allows Innos to alter the near surface properties of semiconductor materials

The state of the art ion implantation system enables doping of 200mm wafers, safe gas handling (SDS), low contamination (metals and particulates), variable implant angle, wide energy range and large dose range.

CEO of Innos, Stephen Byars comments: "The continued investment in technology is part of our ongoing commitment to work with industry, to push the boundaries of silicon innovation".

"Innos currently has a number of research projects in process in areas such as silicon-based devices, photonic devices, MEMs and quantum technologies".

The installation of the new implanter follows Innos' recent announcement of a GBP 5 million investment in the UK's first JBX-9300FS electron-beam lithography system that enables Innos to provide R and D to below 10nm.

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