Product category:
Microprocessors, Microcontrollers and DSPs
News Release from: Innos
Edited by the Electronicstalk Editorial
Team on 22 March 2005
European project bears fruit
Innos has revealed the results of the European Commission funded - Framework 5 SIGMOS Project.
Innos, the UK's leading research and development company delivering expertise in silicon, MEMS and nanotechnologies, has revealed the results of the European Commission funded - Framework 5 SIGMOS Project The Innos team in co-operation with leading institutions and universities has developed a process that provides selective epitaxy - used for elevated sources and drains - through the combination of silane and dichlorosilane without a requirement for chlorine or hydrogen chloride in the gas stream
This article was originally published on Electronicstalk on 1 Nov 2004 at 8.00am (UK)
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The minimisation of the Cl2 and HCl content in the gas stream is highly desirable as it is both highly corrosive and because processes with Cl2 or HCl are susceptible to loading effects.
"The selectivity of the epitaxy can be controlled by varying the proportion of dichlorosilane in the growth process", explains Director and Technical Advisor at Innos and Professor at the University of Southampton, Peter Ashburn.
"Pure dichlorosilane gives etching of the silicon surface, whilst pure silane gives nonselective epitaxy and silane/dichlorosilane ratios in the range 1:1 to 3:1 to give selective epitaxy".
The research conducted by Innos at its facility in Southampton delivers raised sources and drains for 50nm MOSFET devices with a surface that is completely flat and with no evidence of facets adjacent to the nitride spacer.
The raised source/drain delivers improved subthreshold slopes, reduced threshold voltage rolloff and reduced drain induced barrier lowering compared with reference transistors.
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