Product category:
Memory Devices and Modules
News Release from: Integrated Silicon Solution | Subject: IS61C5128AX and IS61C25616X
Edited by the Electronicstalk Editorial
Team on 14 August 2007
Asynchronous SRAMs support legacy
systems
In addition to 1.8, 2.5 and 3.3V SRAMs, Integrated Silicon Solution now has a wide variety of 5V SRAMs from 256Kbit to 4Mbit.
A new line of 5V, 4Mbit asynchronous SRAMs from Integrated Silicon Solution includes devices organised as 512K x 8 and 256K x 16bit with access times as fast as 10ns and standby current as low as 200nA Fabricated using 6T cell, 0.13micron, CMOS technology, this highly reliable process coupled with innovative circuit design techniques yield high-performance and low power consumption devices
This article was originally published on Electronicstalk on 6 Nov 2007 at 8.00am (UK)
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Commercial, industrial and automotive temperature ranges are available to support a wide variety of applications in the industrial, automotive, telecomms and networking markets that still require 5V operation.
These devices operate from a single 5V, 10% power supply and have TTL compatible interface levels.
"The addition of these devices is part of ISSI's commitment to long term support of memory".
"In addition to 1.8, 2.5 and 3.3V SRAMs, ISSI now has a wide variety of 5V SRAMs from 256Kbit to 4Mbit", says Sanjiv Asthana, ISSI's Vice President of Sales and Marketing.
In quantities of 10,000, the devices are priced at US $3.50.
The 512K x 8bit IS61C5128AX and IS64C5128AX (automotive) are available in 36-pin SOJ (400mil), 32-pin sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II JEDEC standard packages.
The 256K x 16bit IS61C25616X and IS64C25616X (automotive) are available in 44-pin SOJ and 44-pin TSOP-II JEDEC standard packages.
These devices can be ordered as lead-free.
Samples are available now, with volume production shipments beginning in September.
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