Financing boosts sales and marketing capabilities
Austin Ventures has led a $16 million Series B round of financing targeted at expanding Innovative Silicon's sales and marketing capabilities for its ultra-high-density memory technology.
Austin Ventures has joined with existing investors to lead a $16 million Series B round of financing targeted at expanding Innovative Silicon's sales and marketing capabilities for its ultra-high-density memory technology.
Innovative Silicon's Z-RAM technology can achieve five times the density of embedded SRAM and twice the density of embedded DRAM while using a standard SoI logic process, allowing SoC and microprocessor designers to significantly reduce silicon costs or dramatically increase embedded memory content for their designs.
Austin Ventures, based in Austin, Texas, is an active and focused investor in innovative silicon technologies across mixed signal, digital, EDA and IP realms.
Austin pursued its investment in Innovative Silicon after witnessing firsthand the accelerating growth of SoI processes and large embedded memories within the semiconductor design community.
"The feedback we received on Z-RAM from SoC and microprocessor designers and manufacturers was outstanding".
"Z-RAM is revolutionary in that it really turns what was a minor bug into a major feature of SoI, and achieves for the first time a true scalable single device memory".
"Embedded memory is now so important to advanced designs that we expect the Z-RAM innovation to have a major effect on semiconductor economics and performance", said Basil Horangic, General Partner at Austin Ventures.
"Embedded memory technology is becoming the dominant factor affecting the cost of leading edge SoC and microprocessors today", said Mark-Eric Jones, Innovative Silicon President and CEO.
"This new investment will help fuel our growth and provide our patented ultra-high-density Z-RAM technology to designers producing the next generation semiconductor products".
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Innovative Silicon demonstrates Z-RAM advantages
Innovative Silicon (ISI) has demonstrated that its Z-RAM memory technology continues to show advantages over DRAM implementations and other proposed floating body memory designs. -
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Embedded memory exploits SoI floating body effect
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