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Product category: Discrete Power Devices
News Release from: Ixys Semiconductor | Subject: HiPerFRED2
Edited by the Electronicstalk Editorial Team on 23 March 2006

Rectifiers offer application-optimised
variants

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New rectifiers perform with very low conduction and low switching losses, providing a new benchmark for efficiency by reducing the energy loss in electronic systems.

Ixys Corp has developed a new generation of ultrafast rectifiers The new generation is called HiPerFRED2, which is an addition to the Ixys successful HiPerFET power MOSFET product line

These new rectifiers perform with very low conduction and low switching losses, providing a new benchmark for efficiency in power management applications, by reducing the energy loss in electronic systems.

The new HiPerFRED2 technology has been developed as "application-optimised" design, allowing designers to use the most suitable diode for their circuits with improved in switching performance and thermal behaviour allowing higher integration and compact designs, space-saving constructions and a higher system efficiency.

The voltages classes ranges from 200 to 400V.

Two design variants give designers the choice to optimise applications from decoupling diodes, snubber circuits, freewheeling diodes to switch mode power supplies (SMPS).

Design F offers an extremely low forward voltage drop (VF) that supports circuits where the on-state losses are dominant.

G-types are developed for high switching frequencies.

Both designs offer a leakage current below 1uA that reduces the off-state losses to a minimum - a big benefit in temperature sensitive circuits, for example in automotive designs or plasma display panels (PDPs).

This high performance supports design engineers to realise high integrated circuits with high stability and reliability.

The HiPerFRED2 products are available in several standard packages - surface mount and leaded - and also including Ixys' industry recognised Isoplus packages.

These devices are also available in die form.

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