Product category:
Memory Devices and Modules
News Release from: Kingston Technology | Subject: HyperX DDR2 modules
Edited by the Electronicstalk Editorial
Team on 31 August 2004
Momory modules boast higher bandwidth
Kingston Technology has released new HyperX DDR2 533MHz (PC2-4300) and 675MHz (PC2-5400) memory modules.
Kingston Technology has released new HyperX DDR2 533MHz (PC2-4300) and 675MHz (PC2-5400) memory modules Initially, Kingston Technology's HyperX DDR2 modules, tested to run at PC2-4300 and PC2-5400, will be available in limited quantities
This article was originally published on Electronicstalk on 28 Jan 2004 at 8.00am (UK)
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Faster clocking for DDR modules
Kingston Technology is marking the first anniversary of its HyperX memory product line with the launch of the HyperX DDR 533MHz (PC4300) memory modules.
These new HyperX DDR2 unbuffered DIMMs are available in capacities up to 1Gbyte to support the latest generation of computer platforms (actual speed depends on various supported motherboards).
"Kingston Technology's HyperX DDR2 memory features faster speeds of up to 675MHz, higher data bandwidths, lower power consumption by about 50% and enhanced thermal performance versus DDR", commented Thomas Marschner, Vice President European Sales and Marketing, Kingston Technology.
"Gamers and PC enthusiasts will achieve increased performance and better thermal conditions in their rigs from the latest HyperX offering", concluded Marschner.
Kingston Technology designs and qualifies its HyperX line of products by careful selection of memory components that are assembled and tested for ultimate performance.
The Kingston Technology HyperX PC2-4300 modules have been tested to run at low latency timings of 3-3-3-10 and the PC2-5400 support low latency timings of 4-4-4-10.
SPD timings are programmed at JEDEC standard latency timings of 4-4-4-12.
The new modules also offer a range of advanced features.
HyperX DDR2 modules feature: 1.85V operation, reducing power consumption by about 50%; memory signal termination inside the memory chip ("on-die termination") to prevent reflected signal transmission errors; operational enhancements to increase memory performance, efficiency and timing margins; and CAS latencies of 3 and 4.
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