PIN diodes raise stability and reliability

High-speed PIN diodes are made from high-resistivity epitaxial silicon material, passivated with silicon dioxide to achieve high levels of stability and reliability.

Now available from RF and microwave component specialist Link Microtek is a range of high-speed PIN diodes that are made from high-resistivity epitaxial silicon material, passivated with silicon dioxide to achieve high levels of stability and reliability.

Capable of operating with as little as +10mA forward bias, the devices are ideal for RF switching applications in telecommunications, radar and ECM systems, and they can also be used as current-controlled resistors in attenuator-type applications over the frequency range from UHF to Ku band.

Available with breakdown voltages of 70, 100 or 250V, the Microsemi GC4200 series consists of 18 standard parts offering various combinations of junction capacitance, series resistance and carrier lifetime to suit the requirements of different applications.

All devices meet or exceed the environmental specifications of MIL-S-19500, providing an operating temperature range of -55 to +150C and a storage temperature range of -65 to +200C.

The diodes can be supplied in chip form or packaged in a selection of standard case styles.

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