Product category:
Optoelectronic Sensors, Switches and Receivers
News Release from: Laser Components (UK) | Subject: Avalanche photodiodes
Edited by the Electronicstalk Editorial
Team on 10 February 2005
Avalanche photodiodes hit the streets
Following a year-long development phase, Laser Components is rolling out its new range of silicon avalanche photodiodes (APDs).
Following a year-long development phase, Laser Components is rolling out its new range of silicon avalanche photodiodes (APDs) The new APDs are ideal partners for the company's existing range of 850 and 905nm pulse laser diodes, and so it is now possible to obtain both transmitter and receiver from a single source, with obvious benefits for applications that include range finding, speed control, laser radar, safety scanners or in test and measuring systems for industry and medicine
The SAE series of APDs has an epitaxial structure and is produced on 4in Si wafers.
High sensitivity between 400 and 1100nm and short rise times characterise the new avalanche photodiodes.
Models are available with chip diameters of 230 and 500um integrated in aermetically sealed TO-18 packages.
Available soon will be the lower noise SAR series of APDs designed with a "reach through" structure.
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