High-power amplifier takes bias circuit onboard

Edited by the Electronicstalk editorial team Apr 18, 2005

A new GaAs MMIC two-stage single-ended X-band high-power amplifier integrates an on-chip gate bias circuit to simplify biasing.

A new GaAs MMIC two-stage single-ended X-band high-power amplifier integrates an on-chip gate bias circuit to simplify biasing.

Using 0.5 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 8.7 to 10.7GHz frequency bands, delivers 40dBm output power, and offers 32% power added efficiency.

The amplifier also has a typical large signal gain of 17dB with good input and output match.

This high power amplifier, identified as XP1007, is well suited for radar and communications systems, primarily for military applications.

"Mimix offers this high power amplifier in partnership with TNO", states Rick Montgomery, CEO of Mimix Broadband.

"As strategic partners, we have collaborated to supply this 10W high power amplifier to the marketplace, offering an industry leading device for X-band applications".

"This device not only delivers high power output, it also offers excellent power added efficiency".

Mimix performs 100% on-wafer RF and DC testing on the XP1007, as well as 100% visual inspection to MIL-STD-883 method 2010.

The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples and production quantities are available 6-8 weeks ARO.