Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: GaAs MMIC power amplifiers
Edited by the Electronicstalk Editorial
Team on 13 May 2005
Power amplifiers are highly linear
Mimix Broadband has a new line of highly linear gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifiers, covering the 13 to 40GHz frequency bands.
Mimix Broadband has a new line of highly linear gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifiers, covering the 13 to 40GHz frequency bands Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the new amplifiers are well suited for wireless communications applications, such as commercial digital radios, wireless LANs and VSAT applications
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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"This line of linear amplifiers allows Mimix to significantly expand our product offering for commercial digital radio and satellite applications", stated Rick Montgomery, CEO of Mimix Broadband.
"Along with this new product offering, customers can expect guaranteed performance from our extensive testing of each part, and superior applications support from Mimix's team of engineers".
"We also hope to achieve expedited delivery times to meet customer requirements".
Mimix performs 100% on-wafer RF, DC and output power testing on these power amplifiers, as well as 100% visual inspection to MIL-STD-883 method 2010.
These chips also have surface passivation to protect and provide a rugged part with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Engineering samples are available today from stock, along with small production quantities.
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