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Product category: Analogue and Mixed Signal ICs
News Release from: Mimix Broadband | Subject: XD1002
Edited by the Electronicstalk Editorial Team on 27 June 2005

Distributed amp keeps control of gain

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A new gallium arsenide monolithic microwave integrated circuit distributed amplifier can be used as an ultrawideband amplifier or a fibre optic modulator driver.

Mimix Broadband has developed a new gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) distributed amplifier that can be used as an ultrawideband amplifier or a fibre optic modulator driver Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this distributed amplifier covers the 0.05 to 50GHz frequency bands

The device has a small signal gain of 9dB with noise figure of 5dB across the band.

It also includes 15dB gain control and +9dBm output referred P1dB compression point.

This amplifier, identified as XD1002, is well suited for microwave, millimetre-wave, wideband military and fibre optic applications.

"The use of a distributed cascode topology allows well controlled gain while good match is obtained, and also maintains a relatively small variation in input referred third order intercept", stated Dr Jim Harvey, CTO of Mimix Broadband.

"The IIP3 for this device ranges from +5 to +11dBm as the gain is varied from below -5dB (minimum gain -5 to -8dB) to above +9dB (maximum gain +9 to +11dB)".

"Psat for this device is greater than +17dBm".

Mimix performs 100% on-wafer RF, DC and output power testing on the XD1002, as well as 100% visual inspection to MIL-STD-883 method 2010.

The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, along with small production quantities.

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