Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XP1017
Edited by the Electronicstalk Editorial
Team on 12 December 2005
Power amp integrates compensated
detector
A new gallium arsenide MMIC two-stage high power amplifier from Mimix Broadband integrates an on-chip temperature compensated output power detector.
A new gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage high power amplifier from Mimix Broadband integrates an on-chip temperature compensated output power detector Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 30 to 36GHz frequency bands and delivers 33dBm OIP3 and 16dB small signal gain
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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This high power amplifier, identified as XP1017, is well suited for millimetre-wave point-to-point radio, LMDS and satcom applications.
"This broadband device has a variety of applications", states Dr Jim Harvey, CTO of Mimix Broadband.
"At the nominal bias for good linearity, it delivers 33dBm OIP3 and 24dBm OP1dB".
"It can be biased at higher levels to deliver higher saturated CW power within acceptable MTTF limits".
"The availability of a detector using a directional 'on-chip' coupler adds to the flexibility of the device for power controlled linear or saturated applications".
Mimix performs 100% on-wafer RF, DC and output power testing on the XP1017, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Production quantities and samples are available now.
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