Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XP1018
Edited by the Electronicstalk Editorial
Team on 18 August 2006
Amp has on-chip gain and power control
A gallium arsenide monolithic microwave integrated circuit four stage power amplifier comes with the unique feature of output power adjustment.
Mimix Broadband has released a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier with the unique feature of output power adjustment Using 0.15um gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 35 to 45GHz frequency bands, and has a small signal gain of 23dB with +25dBm P1dB compression point
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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This power amplifier, identified as XP1018, is ideal for wireless communications applications such as millimetre-wave point-to-point radio, local multipoint distribution services (LMDS), satcom and Vsat applications.
"We've responded to customer needs and provided a lower cost solution for their applications through improved functionality and performance".
"In the XP1018 amplifier, the wideband performance is enhanced by the on-chip gain and power control".
"Excellent linearity performance is maintained under back-down to enable critical power control without the need for additional components", stated Damian McCann, CTO of Mimix Broadband.
Mimix performs 100% on-wafer RF, DC and output power testing on the XP1018, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Samples are available today from stock, along with production quantities.
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