Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XP1022
Edited by the Electronicstalk Editorial
Team on 29 January 2007
Power amp simplifies signal regulation
GaAs MMIC three-stage power amplifier incorporates temperature compensated output detector.
Mimix Broadband has released a GaAs MMIC three-stage power amplifier with the unique feature of a temperature compensated output detector Using 0.15um gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 25GHz frequency bands and has a small signal gain of 20dB with +28dBm P1dB compression point
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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The XP1022 die includes on-chip ESD protection and is available in an RoHS compliant 4 x 4mm QFN surface mount package offering excellent RF and thermal properties.
This power amplifier, identified as XP1022-BD for the bare die device or XP1022-QF for the QFN package, is ideal for wireless communications applications such as millimetre-wave point-to-point radio, local multipoint distribution services (LMDS), satcom and Vsat applications.
"The XP1022 offers the unique combination of broadband operation with good linearity and power efficiency", stated Paul Beasly, Product Manager of Mimix Broadband.
"The device is very competitive in size with the added advantages of being available in a 4x4 QFN package and offering the unique feature of an on-chip temperature compensated power detector that allows the user to easily regulate the signal level without the need for additional power detectors in the transmitter chain".
Mimix performs 100% RF, DC and output power testing on the XP1022, as well as 100% visual inspection to MIL-STD-883 method 2010 for the bare die.
The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
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