Product category:
Analogue and Mixed Signal ICs
News Release from: Mimix Broadband | Subject: CSW0118-BD
Edited by the Electronicstalk Editorial
Team on 01 February 2007
Switch covers 0.5 to 18GHz frequency
bands
GaAs MMIC single-pole double-throw switch is based on 0.5um gate length GaAs pseudomorphic high electron mobility transistor device model technology.
New from Mimix Broadband, the CSW0118-BD is a GaAs MMIC single-pole double-throw (SPDT) switch based on 0.5um gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology This switch covers the 0.5 to 18GHz frequency bands, and achieves 1.8dB insertion loss and 35dB isolation
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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The device also has a P1dB of 20dBm and 2ns rise/fall time.
The CSW0118-BD is ideal for radar, communications, avionics and test/measurement applications.
The backside is gold plated, making the device compatible with either eutectic or conductive epoxy die attach and either thermocompression or thermosonic wire bonding.
"This broadband switch is much smaller than comparable FET MMICs offering similar performance", stated Amer Droubi, Product Manager of Mimix Broadband.
"Integrated backside via holes lowers ground inductance, improving high frequency performance and simplifying assembly".
"Low insertion loss, low power consumption and broadband performance make this switch ideal for a variety of broadband applications".
Mimix performs 100% DC testing with sample RF evaluation on the CSW0118-BD, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Samples are available today from stock, along with production quantities.
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