Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XP1019-BD
Edited by the Electronicstalk Editorial
Team on 01 May 2007
Power amplifier provides variable gain
Gallium arsenide MMIC three-stage power amplifier features an on-chip temperature compensated output detector.
Mimix Broadband has released a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage power amplifier featuring an on-chip temperature compensated output detector Using 0.15um gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 24GHz frequency bands and has a small signal gain of 18dB with +27dBm P1dB compression point
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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The XP1019-BD die is an excellent buffer or output transmit amplifier and is ideal for millimetre-wave point-to-point radio communications and military applications.
"The XP1019-BD is well suited as a transmit output stage for saturated applications or as a high-power buffer amplifier for linear applications", stated Paul Beasly, Product Manager, Mimix Broadband.
"The device has an on-chip output power detector that can be used to regulate the power level and has the added feature of power control - varying the drain current enables current savings without significant linearity sacrifice".
"These features allow the device to be operated as a variable gain amplifier, adding greater functionality and performance enhancements for our customers".
Mimix performs 100% RF, DC and output power testing on the XP1019-BD, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chips also have near hermetic surface passivation to protect and provide rugged parts with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Production quantities are available today from stock.
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