Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XU1009-BD
Edited by the Electronicstalk Editorial
Team on 31 May 2007
Broadband transmitter chip integrates
more
Gallium arsenide MMIC transmitter offers broadband performance with a high level of functionality.
The XU1009-BD is a gallium arsenide MMIC transmitter that delivers +25dBm OIP3, 35dB gain control and 9dB conversion gain Using 0.15um-gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the transmitter covers the 18 to 36GHz frequency bands and includes a balanced resistive mixer followed by a distributed amplifier, an LO doubler and an LO buffer amplifier
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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Buffer amp runs from 18 to 38GHz
A new gallium arsenide MMIC three stage buffer amplifier features ultrawide bandwidth and high dynamic range.
It is well suited for point-to-point radio, LMDS, satcom or VSAT applications.
"This device integrates a number of functional elements into a single MMIC, offering the customer broadband performance with a high level of functionality", says Paul Beasly, Product Manager, Mimix Broadband.
"The integrated RF buffer amplifier can also be biased down to provide gain regulation, reducing the requirements for attenuation later in the gain and power stages of the transceiver".
Mimix performs 100% on-wafer RF and DC testing on the XU1009-BD, as well as 100% visual inspection to MIL-STD-883 method 2010.
The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallisation to allow either a conductive epoxy or eutectic solder die attach process.
Production quantities are available today from stock.
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