Product category:
Communications ICs (Wireless)
News Release from: Mimix Broadband | Subject: XX1007-QT
Edited by the Electronicstalk Editorial
Team on 07 December 2007
Integrated doubler simplifies circuit
designs
Active doubler is well suited for VSAT, millimetre-wave point-to-point radio, LMDS or satcom applications.
An active doubler in an RoHS compliant 3 x 3mm plastic QFN package that delivers +20dBm output saturated power and 35dBc fundamental suppression Using 0.15um-gate-length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the doubler covers the 13.5-17.0/27.0-34.0GHz frequency bands and integrates a gain stage, passive doubler and driver amplifier onto a single device
This article was originally published on Electronicstalk on 5 Apr 2005 at 8.00am (UK)
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The XX1007-QT from Mimix Broadband is well suited for VSAT, millimetre-wave point-to-point radio, LMDS or satcom applications.
The XX1007-QT includes on-chip ESD protection and an integrated bypassing capacitor, eliminating the need for any external components.
The device has a self-bias configuration, requiring only a positive 5V supply.
"The high level of integration coupled with a standard 3 x 3mm plastic QFN package offers our customers an optimal cost effective solution, saving precious board area and component count", says Amer Droubi, Product Manager, Mimix Broadband.
"Eliminating the need for negative voltage supply and external bypassing elements simplifies our customers' PCB layout and reduces their time to market".
"The high output power of the XX1007-QT makes it ideal as a driver stage to the final output power amplifier in VSAT transmit systems".
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