Silicon carbide materials come in two grades

Morgan Advanced Ceramics offers Performance silicon carbide (SiC) for semiconductor processing equipment manufacturing.

Morgan Advanced Ceramics offers Performance silicon carbide (SiC) for semiconductor processing equipment manufacturing.

Performance SiC is available in two grades, ultrapure and low electrical resistivity.

Using an advanced chemical vapour deposition (CVD) manufacturing process, both ultrapure and low electrical resistivity Performance SiC, outperform conventional materials in hostile chemical and plasma environments.

The superior properties of Performance SiC - high purity, stiffness, thermal shock resistance and thermal conductivity - make it ideal for a variety of demanding semiconductor processing applications.

Traditionally, Performance SiC has been used in rapid thermal processes (RTP) and single-wafer CVD processes, which take advantage of the material's excellent thermal shock resistance and resistance to erosion by high energy plasmas.

Low electrical resistivity Performance SiC is used in heating elements and susceptors, improving heating uniformity inside the processing chamber.

Performance SiC is also well-matched for optical moulds, gas distribution plates, edge rings, heaters, plasma etch chamber components, electrostatic chucks or any application that requires electrical conductivity, wear resistance and thermal shock resistance.

Reducing warranty costs, parts made of Performance SiC last longer than those made of other materials.

The high purity of Performance SiC minimises the risk of contamination.

It creates faster throughputs and cycle times and reduces downtime for semiconductor manufacturers.

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