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MoSys
1020 Stewart Drive
Sunnyvale
CA 94085
USA
Latest articles from this company
News releases from this company
Display memory runs OLED in LG handset
1T-SRAM dual-port display macros are designed specifically for mobile handset applications, such as those included in the LG Electronics AMOLED-based display.
News from Electronicstalk, 25 June 2008
Bitmicro licenses MoSys SRAM technology
Nonvolatile memory specialist licenses 1T-SRAM embedded memory macro technology from a supplier of solid-state intellectual property.
News from Electronicstalk, 23 April 2007
High density SRAM for system on chip
A large amount of embedded memory on a competitively priced consumer-oriented SoC will enhance the real-time conference-calling capabilities of mobile phones.
News from Electronicstalk, 13 April 2007
Murayama takes on key Japanese market
MoSys has named Takashi Murayama (56) as Vice President and Country Manager, Japan.
News from Electronicstalk, 10 April 2007
Memory IP is optimised for cellular handsets
MoSys has developed an application-specific implementation of its industry-leading 1T-SRAM IP for the cellular phone market.
News from Electronicstalk, 26 March 2007
Embedded Flash deal for silicon foundry
Silicon foundry gets IP rights to make high-density embedded Flash
News from Electronicstalk, 16 March 2007
TSMC signs up for 1T-SRAM technology
MoSys has licensed Taiwan Semiconductor Manufacturing Company to develop and market memory macro products using its patented 1T-SRAM high-density embedded memory intellectual property.
News from Electronicstalk, 6 February 2007
Macros speed SoC static RAM integration
1T-SRAM Classic Memory Macros are a family of preconfigured high-density high-speed low-power memory macros using silicon-proven 0.13-micron cores.
News from Electronicstalk, 16 June 2005
Compiler generates SRAM design scenarios
MoSys has released a 1T-SRAM memory compiler for standard 0.13-micron CMOS logic processes.
News from Electronicstalk, 16 June 2005
SigmaTel commits to embedded memory technologies
A new long-term agreement enables SigmaTel to license MoSys' 1T-SRAM embedded memory technologies to enhanced future mixed-signal product features and benefits.
News from Electronicstalk, 25 February 2004
Embedded memory to feature in multimedia processor
MoSys has licensed its 1T-SRAM embedded memory technology to Vimicro for use in next-generation multimedia processors for cellular phones.
News from Electronicstalk, 24 February 2004
Agilent signs for single-transistor SRAM IP
Agilent Technologies has licensed MoSys' 1T-SRAM embedded memory technology.
News from Electronicstalk, 30 January 2004
Lantronix embeds 1T-SRAM
Lantronix has begun producing chips containing MoSys' 1T-SRAM embedded memory technology.
News from Electronicstalk, 27 January 2004
Sanyo is sold on 1T-SRAM
MoSys has licensed its 1T-SRAM embedded memory technology to Sanyo Electric for use in its consumer product SoC designs.
News from Electronicstalk, 23 January 2004
Quad-density memory shrinks to nanometre processes
MoSys is to port its innovative quad-density 1T-SRAM-Q technology to UMC's 130 and 90nm logic processes.
News from Electronicstalk, 24 July 2003
Memory IP growth leads the market
MoSys has been named as the fastest growing top 10 semiconductor intellectual property vendor by IP revenue, according to a report by leading independent market research company, Gartner Dataquest.
News from Electronicstalk, 14 July 2003
Shimauchi takes charge in Tokyo
Shigeru (Gerry) Shimauchi has joined its worldwide management team at MoSys.
News from Electronicstalk, 2 May 2003
Advanced Communication Devices takes 1T-SRAM route
MoSys has licensed its 1T-SRAM embedded memory technology to Advanced Communication Devices Corp.
News from Electronicstalk, 24 February 2003
SRAMs shrink to 0.13-micron SoC process
MoSys' 1T-SRAM-R technology incorporating transparent error correction has been silicon proven on UMC's 0.13-micron logic process.
News from Electronicstalk, 17 January 2003
Web-based compiler to evaluate 1T-SRAM
MoSys has released its first 1T-SRAM compiler for TSMC and UMC 0.15-micron logic processes.
News from Electronicstalk, 25 December 2002
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