Product category:
Memory Devices and Modules
News Release from: MoSys
Edited by the Electronicstalk Editorial
Team on 10 May 2001
MoSys 1T-SRAM verified for SoCs from
TSMC
MoSys has completed silicon verification of its ultra-dense 1T-SRAM memory technology on TSMC's EmbFlash process.
MoSys has completed silicon verification of its ultra-dense 1T-SRAM memory technology on TSMC's EmbFlash process SoC designers requiring nonvolatile memory can now integrate megabytes of SRAM onto their designs
This article was originally published on Electronicstalk on 21 Aug 2001 at 8.00am (UK)
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Off-the-shelf macros put 1T-SRAM on SoC menu
MoSys has made available a family of standard 1T-SRAM memory macros using silicon-proven 0.25- and 0.18-micron cores.
36Mbit SRAM is optimised for 100% bus usage
MoSys is shipping its high-density, low-power 36Mbit memory, making it the first to market with this level of bit density.
"MoSys is delivering the advantages of 1T-SRAM to EmbFlash users enabling a new set of consumer SoC applications", commented Mark-Eric Jones, MoSys' vice president and general manager of intellectual property.
"These high-volume applications particularly benefit from the improved cost, yield and manufacturability of this technology".
MoSys' 1T-SRAM has already been silicon-proven across five generations of standard logic processes.
Silicon validation of 1T-SRAM memory on TSMC's 0.25-micron embedded Flash process continues to highlight the portability of this patented technology as MoSys extends its range of intellectual property products.
MoSys' patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
The single transistor bit cell used in 1T-SRAM technology achieves much higher density than traditional four or six transistor SRAMs while using standard logic manufacturing processes.
No changes are required to standard logic processes when implementing the 1T-SRAM embedded memory.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs.
In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in SoC designs.
1T-SRAM technology is in high volume production in SoC products from MoSys' licensees.
The high density of 1T-SRAM memory results in dramatic silicon area savings and manufacturing yields that are much higher than traditional six transistor memories.
The high yield is further enhanced by built-in redundancy.
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