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Product category: Intellectual Property Cores
News Release from: MoSys
Edited by the Electronicstalk Editorial Team on 25 May 2001

Nintendo uses MoSys 1T-SRAM for latest
console

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Nintendo is to incorporate 27Mbyte of MoSys' high-performance, low-latency 1T-SRAM memory technology in the production of the Gamecube, its new generation video game console.

Nintendo is to incorporate 27Mbyte of MoSys' high-performance, low-latency 1T-SRAM memory technology in the production of the Gamecube, its new generation video game console Setting a new standard by incorporating more SRAM-performance memory than any previous consumer product, the Nintendo Gamecube realises the highest level of graphics performance while also enhancing the productivity of games developers

"The exceptional low latency and high speed, combined with the production benefits of easy manufacturability of 1T-SRAM memory is enabling product designers to set new standards for cost and performance", commented Dr Fu-Chieh Hsu, MoSys' CEO and president.

"We are proud of MoSys' contribution to this outstanding product from Nintendo".

By using MoSys' 1T-SRAM technology in the graphics processor's embedded memories, as well as the main system memories, the Gamecube avoids the hardware complexities required by the variable-latency and low-performance of other memory technologies.

The dependable high-performance and low-latency characteristic of the 1T-SRAM memory technology also simplifies the task of writing and debugging games for Gamecube.

With a sustained latency of under 10ns and 400MHz operation, the 24Mbyte of 1T-SRAM main memory in Gamecube delivers performance previously only available in cache memories, while the 3Mbyte of 1T-SRAM memories embedded in the Flipper graphics processor chip have under 5ns latency and deliver a sustained bandwidth of over 20Gbyte/s.

"Gamecube has achieved the highest level system-on-chip integration for game consoles.

We are very pleased with this successful collaboration, combining NEC LSI and process strength with MoSys 1T-SRAM technology in the Flipper system LSI device producing an extremely high performance and highly manufacturable product", commented Hiro Hashimoto, CEO and president of NEC Electronics whose state-of-the-art fabrication facility in Kyushu, Japan is manufacturing the graphics processor and main memory chips that use MoSys' 1T-SRAM technology.

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