Product category:
Memory Devices and Modules
News Release from: MoSys | Subject: 1T-SRAM at TSMC
Edited by the Electronicstalk Editorial
Team on 15 November 2001
1T-SRAM ready to roll on 0.13-micron
processes
MoSys' 1T-SRAM technology has now been verified on multiple versions of TSMC's 0.13-micron standard and triple-oxide logic processes with excellent yield results.
MoSys' 1T-SRAM technology has now been verified on multiple versions of TSMC's 0.13-micron standard and triple-oxide logic processes with excellent yield results TSMC is now ready to accept customers' tapeouts using these 0.13-micron triple-oxide logic processes
This article was originally published on Electronicstalk on 21 Aug 2001 at 8.00am (UK)
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Off-the-shelf macros put 1T-SRAM on SoC menu
MoSys has made available a family of standard 1T-SRAM memory macros using silicon-proven 0.25- and 0.18-micron cores.
36Mbit SRAM is optimised for 100% bus usage
MoSys is shipping its high-density, low-power 36Mbit memory, making it the first to market with this level of bit density.
MoSys and TSMC further announced verification and excellent test and yield results of 1T-SRAM test memory cells targeted for the 0.10-micron process generation.
MoSys is already in the process of implementing 1T-SRAM memory macros fully adjusted for TSMC's 0.10-micron optimised logic process.
"As designers move increasingly to system-on-chip methodologies, we see growing customer interest in easily manufacturable embedded high-density memories", said Genda Hu, vice president of marketing at TSMC.
"TSMC has consistently been the first foundry to successfully manufacture 1T-SRAM in mass production and has a strong alliance with MoSys.
Starting with 0.13um generation, we are committed to providing a logic process especially optimised for 1T-SRAM".
Mark-Eric Jones, MoSys' vice president and general manager of intellectual property commented, "Our close collaboration with TSMC over the last two years in porting and verification of our 1T-SRAM embedded memory macros over five generations of standard logic processes had been extremely successful and productive.
Both TSMC and its customers benefit greatly from the dramatic cost savings and time-to-volume advantages delivered by our embedded 1T-SRAM technology.
We will continue our collaboration with TSMC on their most advanced logic processes to provide mutual customers with the best and most complete 1T-SRAM offering at the earliest stage".
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