Philips to use 1T-SRAM in cellular infrastructure

MoSys has licensed its 1T-SRAM embedded memory technology to the semiconductor division of Philips.

MoSys has licensed its 1T-SRAM embedded memory technology to the semiconductor division of Philips.

The 1T-SRAM embedded memory technology will be used for Philips' cellular infrastructure ASICs/SoCs, enabling the incorporation of high performance, high density embedded memory blocks.

"The 1T-SRAM embedded memory was evaluated according to our cellular infrastructure customer requirements, and we selected MoSys technology for its unique performance, density and power capabilities not available from other standard SRAM technologies", said Malcolm Spencer, general manager Cellular Infrastructure business line at Philips Semiconductors.

"By using the MoSys 1T-SRAM embedded memory, our customers will benefit from the high density and production-proven advantages of this technology".

The license agreement will initially be used for products built in the 0.13-micron process generation using MoSys' recently announced 1T-SRAM-R technology that incorporates transparent error correction to eliminate the need for the laser repair manufacturing step while providing improved soft error rate, yield and reliability compared to other embedded memory technologies.

"We are very pleased that MoSys' 1T-SRAM technology was chosen by the Cellular Infrastructure business line of Philips Semiconductors", said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys.

"Our 1T-SRAM technology has been proven in volume production to offer cost savings, quality and reliability improvements that cannot be matched by other embedded memory technologies.

As the proportion of SoC die area occupied by memory continues to grow, these benefits translate to dramatic advantages for the whole SoC".

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