Lantronix embeds 1T-SRAM

Edited by the Electronicstalk editorial team Jan 27, 2004

Lantronix has begun producing chips containing MoSys' 1T-SRAM embedded memory technology.

Lantronix has begun producing chips containing MoSys' 1T-SRAM embedded memory technology.

Lantronix will be using the chips in a wide range of solutions that allow virtually any device to be accessed, monitored and managed over Ethernet networks.

"We selected MoSys' 1T-SRAM embedded memory technology because it offers higher performance at a lower cost while occupying less die space than alternatives", said Curt Brown, Executive Vice President of Research and Development for Lantronix.

"Our networking products require the highest quality technology available at all levels of production.

MoSys delivers an innovative, high density memory solution that allows the design of high-performance, cost-efficient SoCs to drive Lantronix products".

MoSys' patented 1T-SRAM memory technology enables large amounts of memory to be embedded into SoC designs using a standard logic process, providing reliability and high performance crucial to Internet and networking technology.

The Lantronix chips that incorporate MoSys technology will be used to provide network connectivity and device management solutions for Lantronix' diverse customer base.

"MoSys' 1T-SRAM memory technology is ideal for any type of high-performance networking solution for the numerous benefits it affords users, including its efficient use of power and space", said Mark-Eric Jones, Vice President and General Manager of Intellectual Property at MoSys.

"We are delighted that Lantronix chose to license MoSys' memory technology and look forward to working with the company on future generations of its advanced networking chips".