Agilent signs for single-transistor SRAM IP

Agilent Technologies has licensed MoSys' 1T-SRAM embedded memory technology.

Agilent Technologies has licensed MoSys' 1T-SRAM embedded memory technology.

The long-term agreement enables Agilent to integrate MoSys' embedded memory into its current and next-generation ASIC and SoC products.

"MoSys' 1T-SRAM technology provides us with a solution for embedding large, high-performance, high-density memories into a wide range of ASIC and SoC applications", said James Stewart, Vice President and General Manager of Agilent's ASIC Products Division.

"Our selection of this innovative memory technology reflects an ongoing commitment to meeting the performance requirements of our customers".

MoSys' 1T-SRAM technologies have already been silicon-proven in six process generations - including 90nm - and are in high-volume production in many consumer and communications products.

"As the semiconductor industry continues to require much greater quantities of high-performance memory in SoC designs, 1T-SRAM memories enable customers to reach new levels of performance, quality and low-cost that cannot be achieved using other embedded memory technologies", noted Mark-Eric Jones, Vice President and General Manager of Intellectual Property at MoSys.

"We are pleased to add Agilent Technologies to our growing list of leading semiconductor customers".

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