Product category:
Intellectual Property Cores
News Release from: MoSys
Edited by the Electronicstalk Editorial
Team on 06 February 2007
TSMC signs up for 1T-SRAM technology
MoSys has licensed Taiwan Semiconductor Manufacturing Company to develop and market memory macro products using its patented 1T-SRAM high-density embedded memory intellectual property.
MoSys has licensed Taiwan Semiconductor Manufacturing Company to develop and market memory macro products using its patented 1T-SRAM high-density embedded memory intellectual property (IP) The agreement covers current and advanced manufacturing process generations and further reinforces the companies' commitment to a long-term technical and commercial relationship
This article was originally published on Electronicstalk on 15 Nov 2001 at 8.00am (UK)
Related stories
1T-SRAM ready to roll on 0.13-micron processes
MoSys' 1T-SRAM technology has now been verified on multiple versions of TSMC's 0.13-micron standard and triple-oxide logic processes with excellent yield results.
In addition, MoSys will become one of TSMC's embedded DRAM platform providers.
At the same time, MoSys will continue to offer memory macros to its own customers for presently available and future nanometre geometries.
"The renewal of MoSys' high-density embedded memory intellectual property license by TSMC marks an important milestone for MoSys", commented Chet Silvestri, Chief Executive Officer of MoSys.
"Now SoC designers will continue to have access to advanced eDRAM technology and design expertise from the world's largest semiconductor foundry".
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