Product category:
Intellectual Property Cores
News Release from: MoSys
Edited by the Electronicstalk Editorial
Team on 16 March 2007
Embedded Flash deal for silicon foundry
Silicon foundry gets IP rights to make high-density embedded Flash
MoSys has extended its partnership with China's leading foundry, Semiconductor Manufacturing International Corporation (SMIC) to include MoSys' new high-density embedded Flash memory IP Under the terms of the agreement, the companies are collaborating on the establishment of MoSys' 1T-Flash on SMIC's manufacturing processes
This article was originally published on Electronicstalk on 21 Aug 2001 at 8.00am (UK)
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Off-the-shelf macros put 1T-SRAM on SoC menu
MoSys has made available a family of standard 1T-SRAM memory macros using silicon-proven 0.25- and 0.18-micron cores.
MoSys' 1T-Flash is an extremely high density NOR Flash replacement and is being implemented on SMIC's pure logic CMOS processes.
No additional process masks or materials are required.
MoSys' 1T-Flash will offer developers of mobile devices, such as cellular phones, and developers of embedded microcontrollers significant cost advantages over current-generation solutions.
"Together with SMIC, we can offer a very compelling solution for SoC designers who want to integrate large amounts of high-performance flash memory", says Chet Silvestri, President and CEO of MoSys.
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