Display memory runs OLED in LG handset

1T-SRAM dual-port display macros are designed specifically for mobile handset applications, such as those included in the LG Electronics AMOLED-based display.

LG Electronics has begun shipping the world's first mobile handset using the MoSys 1T-SRAM dual-port memory technology.

The MoSys technology is an application-specific implementation of its industry-leading 1T-SRAM memory IP for the cellular phone market.

The MoSys 1T-SRAM dual-port display macros have been designed specifically for mobile handset applications, such as those included in the LG Electronics AMOLED-based display.

The MoSys 1T-SRAM dual-port display macro is used as the display buffer memory mounted on the display (chip-on-glass) or on the connecting cable (chip-on-film or tape carrier package).

By keeping the display buffer memory on the display itself, LG Electronics should reduce the challenges inherent in electromagnetic interference (EMI), while cutting overall display power consumption.

In the LG handset, the buffer memory must conform to unusual area and form factor requirements of the AMOLED display, which is easily accomplished using the MoSys 1T-SRAM technology.

Compatible with high-volume processes at major foundries and integrated device manufacturers, the MoSys 1T-SRAM dual-port display macro uses standard foundry process technologies and offers a reduction in overall silicon area of up to 70% when compared with conventional embedded memory solutions.

According to Len Perham, MoSys' President and Chief Executive Officer: "Our customers continue to innovate using the core MoSys 1T-SRAM technology, which enables new and exciting mobile consumer applications".

"We are seeing strong customer interest in our new MoSys dual-port display macro, which is the first application-optimised memory built on our technology platform".

"We are pleased to have a leader like LG Electronics provide the first commercial implementation of that technology".

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