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Product category: Discrete Power Devices
News Release from: Freescale Semiconductor | Subject: MW6IC2240NB etc
Edited by the Electronicstalk Editorial Team on 14 February 2007

Power transistor is made for Chinese
basestations

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High-power multistage RF power LDMOS FET is characterised for TD-SCDMA wireless basestations.

In the worldwide race to prepare for deployment of next-generation wireless standards, Freescale Semiconductor has introduced a high-power multistage RF power LDMOS FET characterised for Time Division-Synchronous Code Division Multiple Access (TD-SCDMA) wireless basestations The TD-SCDMA standard is a third-generation wireless access method that is expected to be widely deployed in the People's Republic of China

Freescale is the first company to deliver commercial RF integrated circuits (RFICs) characterised for the emerging standard.

The high output levels of the newly optimised Freescale MW6IC2240NB allow OEMs to reduce their part count from two or three devices to one, saving board space and reducing power consumption and cost.

The flagship MW6IC2240NB is an LDMOS two-stage RFIC.

When employed in a final amplifier application at 28V, it is designed to deliver a gain of 28dB, ALT1 of -47dBc and ALT2 of -49dBc (six-carrier TD-SCDMA signal) from 2010 to 2025MHz at an output power of 35dBm.

The MW6IC2240NB operates from 26 to 32V and features integrated quiescent current temperature compensation.

It is housed in a TO-272 overmoulded cost-effective plastic package.

"All wireless markets, including the emerging TD-SCDMA applications, demand the most cost-effective solutions at all levels of technology from components through subsystems", said Gavin P Woods, Vice President and General Manager, RF Division, Freescale Semiconductor.

"By combining multiple gain stages in a single RFIC package, we designed the MW6IC2240NB to significantly reduce an OEM's design complexity, part count, system sise and bill of materials".

In addition to the MW6IC2240NB, Freescale introduced six additional LDMOS and MOSFET power amplifiers well suited for multicarrier applications such as CDMA, W-CDMA and TD-SCDMA.

All the devices are RoHS compliant, have internally matched inputs and outputs, and are available on tape and reel.

They operate from bias voltages of 26 to 32V.

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