Product category:
Communications ICs (Wireless)
News Release from: Freescale Semiconductor | Subject: MWE6IC9100N and MW7IC18100N
Edited by the Electronicstalk Editorial
Team on 14 February 2007
RFICs help simplify power amplifier
system designs
RF integrated circuits are capable of delivering the 100W RF output power required for GSM and Edge network basestations.
Freescale has launched the industry's first two-stage RF integrated circuits (RFICs) capable of delivering the 100W RF output power required for GSM and Edge network basestations at the 3GSM World Congress The devices are the highest power two-stage RFICs to be offered commercially
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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When driven by Freescale's cost-effective MMG3005N general purpose amplifier (GPA), the MWE6IC9100N and MW7IC18100N RFICs form a comprehensive 100W power amplifier solution for wireless basestations operating at 900 and 1800MHz.
The advantages are significant for the GSM and Edge market.
Historically, the output power of two-stage RFICs has been limited to less than 30W, relegating their utility to driver and predriver stages.
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Previous designs required a separate high power transistor to achieve the 50dB of gain and the 100W of output power typically required for GSM Edge transmitters.
Now, only a GPA and a single RFIC combine to meet this requirement.
"These 100W RFICs are a breakthrough in RF power technology for the wireless marketplace", said Gavin P Woods, Vice President and General Manager of Freescale Semiconductor's RF Division.
"They are the highest power two-stage RFICs ever commercially offered and they are housed in overmoulded plastic rather than air cavity packages".
"Either of these advancements alone would be significant, but together they represent a significant step forward for the industry".
The MWE6IC9100N is designed for both the 869 to 894MHz cellular and 920 to 960MHz GSM bands.
For GSM operation, the device is designed to deliver CW output power of at least 100W at 1dB gain compression (P1dB) in 28V Class AB bias conditions.
Gain is 33.5dB and power added efficiency is in excess of 52% over the intended operating range.
Under a 28V drain bias and 5W average output power in an Edge application, the MWE6IC9100N addresses the stringent linearity requirements with spectral regrowth of -63 and -81dBc at 400 and 600kHz, respectively, with EVM of 2% RMS.
The MW7IC18100N covers the 1805 to 1880MHz and 1930 to 1990MHz bands.
It is designed to deliver P1dB RF output power of 100W CW with 30dB of gain and power added efficiency of 48% over the intended operating range when running in a GSM environment at 28V.
Edge performance includes average power of 40W, spectral regrowth of -63dBc (400kHz offset) and -80dBc (600kHz offset), with EVM of 1.5% RMS.
Housed in cost-effective overmoulded plastic packaging, both RFICs are internally matched and exhibit outstanding ruggedness.
They have integral ESD protection, are RoHS compliant and can handle 200C junction temperatures.
They also include an integral quiescent current thermal tracking device that provides effective temperature compensation to keep current constant within 5% over a 115C operating temperature range for all amplifier stages.
The RFICs help simplify power amplifier system designs by incorporating an automatic biasing function, which allows designers to set amplifier biases with minimal external circuitry.
Additionally, the devices automatically compensate to set the desired drain quiescent current with a minimum amount of external control circuitry required.
The MWE6IC9100N is in full production and available now.
The MW7IC18100N is sampling now with full production planned for March 2007.
Validated RF models and full lineup demo boards using MMG3005N are available now for both products.
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