Product category:
Discrete Power Devices
News Release from: Freescale Semiconductor | Subject: MRF6VP11KH
Edited by the Electronicstalk Editorial
Team on 06 June 2007
RF transistor makes powerful claims
Power transistor delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class.
Freescale Semiconductor has unveiled the world's highest-power LDMOS RF power transistor The MRF6VP11KH device delivers pulsed RF output power of 1kW at 130MHz and features the highest drain efficiency and power gain of any device in its class
This article was originally published on Electronicstalk on 20 Mar 2001 at 8.00am (UK)
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"In delivering the MRF6VP11KH, we have set industry benchmarks in efficiency, output power, reliability and ease of design integration", says Gavin P Woods, Vice President and General Manager of Freescale's RF Division.
"No other RF power device, whether LDMOS, MOSFET or bipolar, can claim this achievement".
"We will continue to introduce innovative devices for this marketplace, enabling our customers to break new barriers in system performance".
Designed for operation from 10 to 150MHz, the transistor leverages Freescale's sixth-generation, very high-voltage (VHV6) laterally diffused metal oxide semiconductor (LDMOS) technology and is the latest example of Freescale's commitment to deliver the industry's most innovative RF power solutions for industrial, scientific, and medical (ISM) markets.
It joins a family of industry-leading 50V VHV6 LDMOS devices announced in June 2006 to meet the demands of ISM applications operating at HF, VHF, and UHF frequencies up to 450MHz.
"Freescale has broken the RF 1kW pulsed power level with 50V LDMOS", says Lance Wilson, semiconductor research director for ABI Research.
"The MRF6VP11KH's high gain, high efficiency, low thermal resistance and high output mismatch survivability are equally impressive".
The benefits of the MRF6VP11KH extend far beyond its status as the most powerful commercially available LDMOS RF transistor.
The MRF6VP11KH delivers 65% drain efficiency, an exceptionally high value for any type of RF power device.
When combined with gain of more than 27dB, this level of efficiency makes it possible to achieve dramatic reductions in amplifier design complexity, gain stages, parts count and circuit board real estate.
An application requiring 2kW pulsed output power and 45dB of gain typically requires a 15 W pre-driver, two 15 W drivers and eight final amplifiers when using MOSFETs or bipolar devices - a total of three stages and 11 devices.
But a design based on the MRF6VP11KH requires only three devices.
A single 10W LDMOS driver and two MRF6VP11KH final amplifiers produce the same output power and a higher gain of 50dB.
In addition, the 50V bias voltage employed by the MRF6VP11KH produces higher terminal impedances for a given power level, which makes the device easier to match into an amplifier circuit.
The thermal resistance of Freescale's RoHS compliant, air-cavity package was measured at less than 0.13C/W JC, providing efficient thermal management and reducing heatsink sise.
The MRF6VP11KH has integrated electrostatic discharge (ESD) protection, which eliminates the need for special handling procedures beyond those routinely observed in electronics manufacturing.
The MRF6VP11KH joins Freescale's family of industry-leading 50V VHV6 LDMOS devices announced in June 2006.
Additional devices for 10-450MHz operation that are already in production include the MRF6V2010N (10W CW, 24dB gain, 62% efficiency), the MRF6V2150N (150W CW, 25dB gain, 68% efficiency), and the MRF6V2300N (300W CW, 25.5% efficiency, 68% efficiency).
Samples of the MRF6VP11KH and a supporting reference design are available now from Freescale and production is expected to begin in Q4 2007.
For pricing information, contact Freescale Semiconductor, a local Freescale sales office or a Freescale authorised distributor.
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