Product category:
Power Supply ICs and Controllers
News Release from: National Semiconductor | Subject: LM5110
Edited by the Electronicstalk Editorial
Team on 15 September 2003
Gate drivers improve power supply
efficiency
New dual gate drivers offer the industry's highest peak output current and unique negative-to-positive output voltage swing.
New dual gate drivers offer the industry's highest peak output current and unique negative-to-positive output voltage swing Featuring ultrafast switching speed (14ns rise and fall times with 25ns propagation delay), the dual 5A peak gate drivers from National Semiconductor are offered in three different versions (inverting, noninverting, and complementary)
This article was originally published on Electronicstalk on 5 Jan 2001 at 8.00am (UK)
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They are designed to drive large power mosfets and low threshold synchronous rectifiers found in communication infrastructure power supplies, motor controls and uninterruptible power supply (UPS) systems.
National Semiconductor's new LM5110 dual gate driver is the latest addition to its family of high-voltage power control integrated circuits designed to enable efficient and reliable DC/DC power supply solutions.
"The LM5110 broadens our high-voltage power IC portfolio for the communications market", said Paul Greenland, Marketing Director of National Semiconductor's Power Management Group.
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"The LM5110's mosfet/bipolar compound output circuitry permits rail-to-rail swing and output current three- to four-times higher than competitive CMOS dual gate drivers.
When combined with our LM5041 or LM5030 high-voltage pulsewidth modulation (PWM) controllers, the LM5110 provides a cost-effective, high-speed PWM and field effect transistor (FET) driver chipset solution for modern power convertors with high-current, low-voltage outputs".
The LM5110 is the industry's first mosfet driver offering split-supply capability to pull the gate below the source, so that low threshold mosfets are held in the off-state with design margin for drain to gate transients and threshold shift.
In conventional single-supply applications with positive-only gate drive, the input reference pin of the LM5110 is simply connected to power ground.
The driver operates over a wide supply voltage range from 3.5 to 14V and have an integrated line undervoltage lockout (UVLO) circuit for safe and predictable operation when powering up/down or during powerline transients.
Integrating important new features onto the two unused pins of industry-standard dual drivers, the LM5110 supplements the unique value of 5A peak output currents with a shutdown pin and negative output drive capability to reliably control power mosfets in any situation.
The LM5110's dual drivers can also be connected in parallel for twice the output current, providing 10A peak current for more demanding applications.
Housed in a tiny, thermally enhanced 10-pin LLP chip-scale package (4 x 4mm), the LM5110 improves thermal performance and minimises overall PCB space, which translates into improved reliability and cost savings.
The LM5110 is offered in three configurations: dual noninverting, dual inverting and one inverting and one noninverting stage.
Electrical specifications are guaranteed over the industrial temperature range from -40 to +125C.
Available today, the LM5110 is offered in either an SOIC-8 package or a 10-pin surface mounted LLP chip-scale package.
It is priced at $0.65 each in 1000 units.
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