Product category:
Memory Devices and Modules
News Release from: NEC Electronics (Europe) | Subject: uPD441000L
Edited by the Electronicstalk Editorial
Team on 03 July 2001
1Mbit SRAM retains its data at low
voltages
NEC's latest 1Mbit SRAM is designed using full CMOS process memory allowing it to operate with supply currents as low as 25mA and with supply voltage 1.8-3.6V.
NEC's latest 1Mbit SRAM is designed using full CMOS process memory allowing it to operate with supply currents as low as 25mA and with supply voltage 1.8-3.6V Offering high-speed access times down to 70ns and operating in an extended -25 to +85C temperature range, the CMOS SRAM is an ideal memory for a wide variety of industrial applications and mobile phones
This article was originally published on Electronicstalk on 16 May 2001 at 8.00am (UK)
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Designed using a 0.32-micron rule, in a 128Kword by 8bit organisation, the SRAM (called uPD441000L) is available in three varieties (B, C and D versions) to suit a variety of industrial applications: B offers the fastest access times of 70ns with supply voltages from 2.7V; C offers access times down to 100ns and supply voltages down to 2.2V; D offers the lowest supply voltage of 1.8V with access times down to 120ns.
C and D versions retain data with a supply voltage as low as 1.5V.
The CMOS SRAM is available in a 32-pin STSOP (8 x 13.4mm) package and to enable extended capacity, the SRAM comes with two chip enable inputs.
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