Product category:
Discrete Power Devices
News Release from: NEC Electronics (Europe) | Subject: NP180N04TUG
Edited by the Electronicstalk Editorial
Team on 17 January 2008
Power MOSFET meets automotive challenges
Advanced architecture and advanced package manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm.
The latest addition to the NEC Electronics NP Series of low-voltage power MOSFETs with ultralow on-resistance is the NP180N04TUG The new power MOSFET features an advanced architecture and advanced package designed to manage heat dissipation and reduce power loss with a maximum on-resistance of 1.5mohm - one of the lowest available
This article was originally published on Electronicstalk on 16 May 2001 at 8.00am (UK)
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Operating at 40V drain-source voltage and 180A, the new device is ideal for applications such as automotive systems, low-voltage DC motor controllers and uninterruptible power supplies that require high current capability, stringent power management and high reliability.
Several key challenges are emerging as the demand for power management devices in automotive applications increases.
In addition to having to meet the requirements for lower overall chip costs and lower on-resistance for better handling of heat dissipation, today's MOSFETs must pass rigorous testing processes to comply with exacting requirements for these application areas.
With its advanced process and packaging, NEC Electronics' NP180N04TUG power MOSFET can help designers overcome these challenges and hit their required cost and design targets.
The NP180N04TUG power MOSFET is manufactured with NEC Electronics' UMOS-4 trench process technology, which achieves an ultra-fine design rule of 0.25um and results in higher cell density, up to 160 million cells per square inch, which enables lower on-resistance over a given area of silicon.
The device also features NEC Electronics' advanced TO-263-7 package, which uses a unique multi-bonding technology that doubles the number of bonding wires from two to four.
Additional bond wires lower on-resistance while improving the MOSFET's current-carrying capabilities up to 180A.
NEC Electronics' NP180N04TUG power MOSFET is rated for both single and repetitive avalanche energy and for operation up to 175C at a gate voltage of 10V and a drain voltage of 40V.
The NP180N04TUG power MOSFET, in a RoHS-compliant package, is available now in 800-unit quantities, with pricing starting at US $2.50 each in low volumes.
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