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News Release from: NEC | Subject: 5T2MTJ cell
Edited by the Electronicstalk Editorial
Team on 18 July 2006
MRAM cell technology for embedding
NEC has developed magnetoresistive random access memory cell technology suitable for high speed memory macro embedded in next generation system LSIs.
NEC Corporation has succeeded in developing new magnetoresistive random access memory (MRAM) cell technology suitable for high speed memory macro embedded in next generation system LSIs The newly developed cell technology includes three key elements; a 2T1MTJ (two transistors and one magnetoresistive tunneling junction) cell structure to accelerate write mode cycle time, a 5T2MTJ cell structure to accelerate read mode cycle time and a write-line-inserted MTJ to reduce write current
This article was originally published on Electronicstalk on 21 Aug 2006 at 8.00am (UK)
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The new cell technology realizes added-value, non-volatile MRAM macros that can be substituted for SRAM (static random access memory) macros embedded in system LSIs.
Features of the newly developed elements include: 200MHz random access write operation; 500MHz random access read operation; reduction of writing current down to 33%.
Recently, the area ratio of memory macros embedded in system LSIs has increased.
Such memory macros can be classified into two types; high speed RAM used temporarily during data processing and NVM (nonvolatile memory) used for data retention during power-off and/or standby state.
To overcome this issue, MRAM technology, which is expected to possess "unified memory" (boasting the merits of both types of memory), has been developed.
However, it is difficult for conventional MRAM technology to enable over 100MHz of random-access-operation frequency, although speed of this level is necessary for next generation system LSIs.
To realize "unified memory", NEC has been developing MRAM technology to accelerate both read and write operation speeds, and has succeeded in developing MRAM cell technology suitable for a high speed memory macro embedded in next generation system LSIs.
NEC's research is partially supported by the New Energy and Industrial Technology Development organisation's (NEDO) MRAM technology developmentproject for realization of high-speed and non-volatile memory macro embedded in system LSIs.
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